TE28F160S31

word-wide flashfile memory, 7.0V, 100 mA, TSOP, TE28F160S31

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Price:: US $1.00~99.00 / piece [Get Latest Price]

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	US $1.00~99.00

PartNumber:: TE28F160S31

Brand:: Intel Corporation - Intel | Pack: TSOP | D/C: 09+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-07-19

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Product Summary

The TE28F160S31 is a word-wide flashfile memory. The TE28F160S31 provides high-density, low-cost, non-volatile, read/write storage solutions for a wide range of applications. The TE28F160S31 is available at various densities in the same package type. Their symmetrically-blocked architecture, flexible voltage, and extended cycling provide highly flexible components suitable for resident flash arrays, SIMMs, and memory cards. Enhanced suspend capabilities provide an ideal solution for code or data storage applications. For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the Word-Wide FlashFile memories offer three levels of protection: absolute protection with VPP at GND, selective block locking, and program/erase lockout during power transitions. These alternatives give designers ultimate control of their code security needs.

Parametrics

TE28F160S31 absolute maximum ratings: (1)Temperature under Bias : –40℃ to +85℃; (2)Storage Temperature: –65℃ to +125℃; (3)Voltage On Any Pin (except VCC and VPP ): –0.5V to + VCC +0.5V; (4)VCC Supply Voltage : –0.2V to + VCC+0.5V; (5)VPP Update Voltage during Block Erase, Flash Write, and Lock-Bit Configuration : –0.2V to +7.0V; (6)Output Short Circuit Current: 100 mA.

Features

TE28F160S31 features: (1)Two 32-Byte Write Buffers 2.7 ms per Byte Effective; (2)Low Voltage Operation; (3)100 ns Read Access Time (16 Mbit), 110 ns Read Access Time (32 Mbit); (4)High-Density Symmetrically-Blocked Architecture; (5)System Performance Enhancements; (6)Industry-Standard Packaging; (7)Cross-Compatible Command Support; (8)100,000 Block Erase Cycles; (9)Enhanced Data ProtectioFeatures; (10)Configurable x8 or x16 I/O; (11)AutomatioSuspend Options; (12)ETOX V Nonvolatile Flash Technology.