Product Summary

Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
erMESH?
IGBTs, with outstanding performances.
The suffix “V” identifies a family optimized for high
frequency.

Parametrics

HIGH CURRENT CAPABILITY
HIGH FREQUENCY OPERATION UP TO
50 KHz
LOSSES INCLUDE DIODE RECOVERY
ENERGY
OFF LOSSES INCLUDE TAIL CURRENT
LOWER CRES / CIES RATIO
NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRUBUTION

Features

VGE(th) Gate Threshold Voltage VCE= VGE, IC= 250μA
VCE(SAT) Collector-Emitter Saturation
Voltage
VGE= 15V, IC= 30A, Tj= 25°C
VGE= 15V, IC= 30A,
Tj= 125°C

Diagrams


STGWT38IH130D
STGWT38IH130D
STMicroelectronics
IGBT Transistors 33A 1300V VF IGBT PowerMESH IGBT
Data Sheet
0-1: $2.88
1-10: $2.53
10-100: $2.08
100-250: $1.88
STGW50NB60M
STGW50NB60M
Other

Data Sheet
Negotiable 
STGW50H60DF
STGW50H60DF
STMicroelectronics
IGBT Transistors 50A 600V FST IGBT Ultrafast Diode
Data Sheet
0-1: $2.58
1-10: $2.27
10-100: $1.86
100-250: $1.69
STGW45NC60WD
STGW45NC60WD
STMicroelectronics
IGBT Transistors PowerMESH IGBT
Data Sheet
0-1: $3.06
1-10: $2.73
10-100: $2.24
100-250: $2.02
STGW60H65DF
STGW60H65DF
STMicroelectronics
IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT
Data Sheet
0-1: $2.67
1-10: $2.15
10-100: $1.96
100-250: $1.76
STGW60H65DRF
STGW60H65DRF
STMicroelectronics
IGBT Transistors 60A 650V Field Stop Trench Gate IBGT
Data Sheet
0-1: $2.66
1-10: $2.14
10-100: $1.94
100-250: $1.75