(China (Mainland))
Product Summary
The VNN1NV04 is a fully autoprotected power mosfet. The VNN1NV04 is designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
Parametrics
VNN1NV04 absolute maximum ratings: (1)VDS Drain-source Voltage (VIN=0V): Internally Clamped V; (2)VIN Input Voltage: Internally Clamped V; (3)IIN Input Current: +/-20 mA; (4)RIN MIN Minimum Input Series Impedance: 330 W; (5)ID Drain Current: Internally Limited A; (6)IR Reverse DC Output Current: -3 A; (7)VESD1 Electrostatic Discharge (R=1.5KW, C=100pF): 4000 V; (8)VESD2 Electrostatic Discharge on output pin only (R=330W, C=150pF): 16500 V; (9)Ptot Total Dissipation at Tc=25℃: 7 to 35 W; (10)Tj Operating Junction Temperature: Internally limited ℃; (11)Tc Case Operating Temperature: Internally limited ℃; (12)Tstg Storage Temperature: -55 to 150 ℃.
Features
VNN1NV04 features: (1)linear current limitation; (2)thermal shut down; (3)short circuit protection; (4)integrated clamp; (5)low current drawfrom input pin; (6)diagnostic feedback through input pin; (7)esd protection; (8)direct access to the gate of the power mosfet (analog driving); (9)compatible with standard power mosfet.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 VNN1NV04 |
Other |
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Data Sheet |
Negotiable |
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VNN1NV0413TR |
STMicroelectronics |
Power Driver ICs N-Ch 40V 1.7A Omni |
Data Sheet |
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VNN1NV04PTR-E |
STMicroelectronics |
MOSFET 40V 1.7A OMNIFET |
Data Sheet |
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VNN1NV04TR-E |
STMicroelectronics |
Power Driver ICs N-Ch 40V 1.7A Omni |
Data Sheet |
Negotiable |
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