UPC8179TB-E3

SILICON MMIC LOW CURRENT AMPLIFIER, 3.6 V, 15 mA, 270 mW, SOT2

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Price:: US $1.00~99.00 / piece [Get Latest Price]

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	US $1.00~99.00

PartNumber:: UPC8179TB-E3

Brand:: NEC - Nec | Pack: SOT | D/C: 11+

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Products Upload time: 2012-07-19

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Part Number:UPC8179TB-E3
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Product Summary

The UPC8179TB-E3 is a silicon MMIC low current amplifier designed as amplifier for mobile communications. The UPC8179TB-E3 can realize low current consumption with external chip inductor which can not be realized on internal 50 W wideband matched IC. The UPC8179TB-E3 operates on 3.0 V. This IC is manufactured using NECs 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

Parametrics

UPC8179TB-E3 absolute maximum ratings: (1)Supply Voltage VCC TA = +25 ℃, Pin 4, Pin 6: 3.6 V; (2)Circuit Current ICC TA = +25 ℃: 15 mA; (3)Power Dissipation PD Mounted on double sided copper clad epoxy glass PWB (TA = +85 ℃): 270 mW; (4)Operating Ambient Temperature TA: -40 to +85 ℃; (5)Storage Temperature Tstg: -55 to +150 ℃; (6)Input Power Pin TA = +25 ℃: +5 dBm.

Features

UPC8179TB-E3 features: (1)Low current consumption : ICC = 4.0 mA TYP. @ VCC = 3.0 V; (2)Supply voltage : VCC = 2.4 to 3.3 V; (3)High efficiency : PO (1 dB)= +3.0 dBm TYP. @ f = 1.0 GHz, PO (1 dB)= +1.5 dBm TYP. @ f = 1.9 GHz, PO (1 dB)= +1.0 dBm TYP. @ f = 2.4 GHz; (4)Power gain : GP = 13.5 dB TYP. @ f = 1.0 GHz, GP = 15.5 dB TYP. @ f = 1.9 GHz, GP = 15.5 dB TYP. @ f = 2.4 GHz; (5)Excellent isolation : ISL = 44 dB TYP. @ f = 1.0 GHz, ISL = 42 dB TYP. @ f = 1.9 GHz, ISL = 41 dB TYP. @ f = 2.4 GHz; (6)Operating frequency : 0.1 to 2.4 GHz (Output port LC matching); (7)High-density surface mounting : 6-pin super minimold package; (8)Light weight : 7 mg (Standard value).