Product Summary
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
erMESH?
IGBTs, with outstanding performances.
The suffix “V” identifies a family optimized for high
frequency.
Parametrics
HIGH CURRENT CAPABILITY
HIGH FREQUENCY OPERATION UP TO
50 KHz
LOSSES INCLUDE DIODE RECOVERY
ENERGY
OFF LOSSES INCLUDE TAIL CURRENT
LOWER CRES / CIES RATIO
NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRUBUTION
Features
VGE(th) Gate Threshold Voltage VCE= VGE, IC= 250μA
VCE(SAT) Collector-Emitter Saturation
Voltage
VGE= 15V, IC= 30A, Tj= 25°C
VGE= 15V, IC= 30A,
Tj= 125°C
Diagrams
STGW12NB60H |
STMicroelectronics |
IGBT Transistors N-Ch 600 Volt 12 Amp |
Data Sheet |
Negotiable |
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STGW12NB60HD |
Other |
Data Sheet |
Negotiable |
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STGW19NC60H |
STMicroelectronics |
IGBT Transistors 19 A 600V FAST IGBT |
Data Sheet |
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STGW19NC60HD |
STMicroelectronics |
IGBT Transistors 19 A - 600 V Very fast IGBT |
Data Sheet |
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STGW19NC60W |
STMicroelectronics |
IGBT Transistors 19A 600V ULT FS IGBT |
Data Sheet |
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STGW19NC60WD |
STMicroelectronics |
IGBT Transistors N Ch 600V 19A |
Data Sheet |
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