(China (Mainland))
Product Summary
The STGW30N120KD is a short circuit rugged IGBT. The applications of it is motor control. The STGW30N120KD utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior.
Parametrics
STGW30N120KD absolute maximum ratings: (1)VCES Collector-Emitter Voltage (VGS = 0): 600 V; (2)VECR Reverse Battery Protection: 20 V; (3)VGE Gate-Emitter Voltage: ±20 V; (4)IC Collector Current (continuous) at 25℃: 50 A; (5)IC Collector Current (continuous) at 100℃: 25 A; (6)ICM (1) Collector Current (pulsed): 100 A; (7)TSC Short Circuit Withstand: 10 μs; (8)PTOT Total Dissipation at TC = 25℃: 170 W; (9)Derating Factor: 1.2 W/℃; (10)Tstg Storage Temperature, Tj Operating Junction Temperature: – 55 to 150 ℃.
Features
STGW30N120KD features: (1)Low on-losses; (2)High current capability; (3)Low gate charge; (4)Short circuit withstand time 10μs; (5)IGBT co-packaged with ultra fast free-wheeling diode.
Diagrams
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 STGW30N120KD |
STMicroelectronics |
IGBT Transistors 30 A - 1200 V Rugged IGBT |
Data Sheet |
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