(China (Mainland))
Product Summary
The MRF275G is a Power Field-Effect Transistor.
Parametrics
MRF275G absolute maximum ratings: (1)Drain–Source Voltage: VDSS: 65 Vdc; (2)Drain–Gate Voltage (RGS = 1.0 MΩ): VDGR: 65 Vdc; (3)Gate–Source Voltage: VGS: ±40 Vdc; (4)Drain Current — Continuous: ID: 26 Adc; (5)Total Device Dissipation: @ TC = 25°C: 400W, Derate above 25°C: 2.27W/°C; (6)Storage Temperature Range: Tstg: –65 to +150 °C; (7)Operating Temperature Range: TJ: 200 °C.
Features
MRF275G features: (1)Guaranteed Performance @ 500 MHz, 28 Vdc: Output Power: 150 Watts, Power Gain: 10 dB (Min), Efficiency: 50% (Min), 100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1; (2)Overall Lower Capacitance @ 28 V: Ciss: 135 pF, Coss: 140 pF, Crss: 17 pF; (3)Simplified AVC, ALC and Modulation D.
Diagrams
| Image | Part No | Mfg | Description |  |
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 MRF275G |
M/A-COM Technology Solutions |
Transistors RF MOSFET Power 5-500MHz 150Watts 28Volt 10dB |
Data Sheet |
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MRF20030 |
Other |
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Data Sheet |
Negotiable |
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MRF20030R |
Other |
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Data Sheet |
Negotiable |
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MRF20060 |
Other |
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Data Sheet |
Negotiable |
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MRF20060_1248487 |
Other |
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Data Sheet |
Negotiable |
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MRF20060R |
Other |
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Data Sheet |
Negotiable |
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MRF20060RS |
Other |
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Data Sheet |
Negotiable |
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