(China (Mainland))
Product Summary
The MRF227 is a silicon NPN RF power transistor. It is designed for large signal power amplifier applications operating to 225 MHz.
Parametrics
MRF227 absolute maximum ratings: (1)IC:0.6 A; (2)VCB:36 V; (3)VCE:16 V; (4)PDISS: 8 W @ TC = 25 °C; (5)TJ: -65 °C to +200 °C; (6)TSTG: -65 °C to +200 °C.
Features
MRF227 features: (1)BVCEO: IC = 50 mA: 16 V; (2)BVCES: IC = 50 mA: 36 V; (3)BVEBO: IC = 1.0 mA: 4.0 V; (4)ICBO: VCE = 15 V: 1.0 mA; (5)HFE: VCE = 5.0 V, IC = 100 mA: 20 to 200; (6)COB: VCB = 12.5 V, f = 1.0 MHz: 15 Pf; (7)GPE: POUT = 3.0 W, VCE = 12.5 V, f = 225 MHz: 13.5 to 15 dB; (8)η: POUT = 3.0 W, VCE = 12.5 V, f = 225 MHz: 60 %
Diagrams
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 MRF227 |
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Data Sheet |
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MRF20030 |
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MRF20030R |
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MRF20060 |
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MRF20060_1248487 |
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Negotiable |
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MRF20060R |
Other |
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Negotiable |
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MRF20060RS |
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Negotiable |
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