Product Summary

The MRF166W is a RF Power Transistor. It is designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz.

Parametrics

MRF166W absolute maximum ratings: (1)Drain–Gate Voltage: VDSS: 65 Vdc; (2)Drain–Gate Voltage (RGS = 1.0 MΩ): VDGR: 65 Vdc; (3)Gate–Source Voltage: VGS: ±20 Adc; (4)Drain Current — Continuous: ID: 8.0 Adc; (5)Total Device Dissipation: @ TC = 25°C:175W, Derate Above 25°C: 1.0W/°C; (6)Storage Temperature Range: Tstg:–65 to 150 °C; (7)Operating Junction Temperature: TJ: 200 °C.

Features

MRF166W features: (1)Push–Pull Configuration Reduces Even Numbered Harmonics; (2)Guaranteed Performance at 500 MHz, 28 Vdc: Output Power = 40 Watts, Gain = 14 dB, Efficiency = 50%; (3)Typical Performance at 175 MHz, 28 Vdc: Output Power = 40 Watts, Gain = 17 dB, Efficiency = 60%; (4)Excellent Thermal Stability, Ideally Suited for Class A Operation; (5)Facilitates Manual Gain Control, ALC and Modulation Techniques; (6)100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR; (7)Low Crss — 4.0 pF @ VDS = 28 Volts.

Diagrams

MRF166W block diagram

Image Part No Mfg Description Data Sheet Download Pricing
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MRF166W
MRF166W

Other


Data Sheet

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MRF1.6/5.6
MRF1.6/5.6

Other


Data Sheet

Negotiable 
MRF1.6/5.6-AP-2.5C
MRF1.6/5.6-AP-2.5C

Hirose Connector

RF Connectors Obsolete

Data Sheet

Negotiable 
MRF1.6/5.6-AP-59U
MRF1.6/5.6-AP-59U

Hirose Connector

RF Connectors Obsolete

Data Sheet

Negotiable 
MRF1.6/5.6-BCUPA
MRF1.6/5.6-BCUPA

Hirose Connector

RF Connectors Obsolete

Data Sheet

Negotiable 
MRF1.6/5.6-LPJ-179U
MRF1.6/5.6-LPJ-179U

Hirose Connector

RF Connectors Obsolete

Data Sheet

Negotiable 
MRF1.6/5.6-LR-PC-1
MRF1.6/5.6-LR-PC-1

Hirose Connector

RF Connectors Obsolete

Data Sheet

Negotiable