Product Summary

The MRF161 is an Enhancement-Mode N-Channel MOS Broadband RF Power Transistor for Wideband Large Signal Amplifier and Oscillator Applications from 2.0 to 400 MHz.

Parametrics

MRF161 absolute maximum ratings: (1)ID: 900 mA; (2)VDSS: 65 V; (3)VGS: ±40 V; (4)PDISS: 17.5 W @ TC = 25°C; (5)TJ: -65°C to +200°C; (6)TSTG: -65°C to +150°C.

Features

MRF161 features: (1)V(BR)DSS: ID = 5.0 mA, VGS = 0 V: 65 V; (2)IDSS: VDSS = 28 V, VGS = 0 V: 1.0 mA; (3)IGSS: VGS = 40 V, VDS = 0 V: 1.0 μA; (4)VGS(th): VDS = 10 V, ID = 10 mA: 1.0 to 6.0 V; (5)gfs: VDS = 10 V, ID = 100 mA: 80 mmhos.

Diagrams

MRF161 block diagram

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MRF161
MRF161

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Data Sheet

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MRF1.6/5.6
MRF1.6/5.6

Other


Data Sheet

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MRF1.6/5.6-AP-2.5C
MRF1.6/5.6-AP-2.5C

Hirose Connector

RF Connectors Obsolete

Data Sheet

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MRF1.6/5.6-AP-59U
MRF1.6/5.6-AP-59U

Hirose Connector

RF Connectors Obsolete

Data Sheet

Negotiable 
MRF1.6/5.6-BCUPA
MRF1.6/5.6-BCUPA

Hirose Connector

RF Connectors Obsolete

Data Sheet

Negotiable 
MRF1.6/5.6-LPJ-179U
MRF1.6/5.6-LPJ-179U

Hirose Connector

RF Connectors Obsolete

Data Sheet

Negotiable 
MRF1.6/5.6-LR-PC-1
MRF1.6/5.6-LR-PC-1

Hirose Connector

RF Connectors Obsolete

Data Sheet

Negotiable