Product Summary

The MJ11029 is a complementary darlington power transistor. Application areas of the MJ11029 include complementary general purpose amplifier.

Parametrics

MJ11029 absolute maximum ratings: (1)Collector – Emitter Voltage: 60V; (2)Collector – Base Voltage: 60V; (3)Emitter – Base Voltage: 5V; (4)Continuous Collector Current: 50A; (5)Peak Collector Current: 100A.

Features

MJ11029 features: (1)high dc current gain; (2)curves to 100a (pulsed); (3)diode protection to rated ic; (4)monolithic construction with built-in base-emitter shunt resistor; (5)junction temperature to +200℃.

Diagrams

MJ11029 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MJ11029
MJ11029

ON Semiconductor

Transistors Darlington 50A 60V Bipolar

Data Sheet

Negotiable 
MJ11029G
MJ11029G

ON Semiconductor

Transistors Darlington 50A 60V Bipolar Power PNP

Data Sheet

Negotiable