(China (Mainland))
Product Summary
The MG100Q2YS51 is an N CHANNEL IGBT.
Parametrics
MG100Q2YS51 absolute maximum ratings: (1)Collector-Emitter Voltage VCES: 1200 V; (2)Gate-Emitter Voltage VGES: ±20 V; (3)Collector Current DC ic (25°C / 80°C): 150/100 A; (4)Forward Current DC If: 100 A; (5)Collector Power Dissipation (Tc = 25°C)PC: 660 W; (6)Junction Temperature Tj: 150 °C; (7)Storage Temperature Range Tstg: -40-125 °C.
Features
MG100Q2YS51 features: (1)High Input Impedance; (2)High Speed : tf=0.3/μs (Max.)@Inductive Load Low Saturation Voltage : VCE (gat)=3.6V (Max.); (3)Enhancement-Mode; (4)Includes a Complete Half Bridge in One Package; (5)The Electrodes are Isolated from Case.
Diagrams
 |
 MG1000E |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MG1001 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MG1001E |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MG1002E |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MG1004 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MG1004E |
Other |
|
Data Sheet |
Negotiable |
|
||||
