(China (Mainland))
Product Summary
The K4E641612E-TL60 is an Extended Data Out Mode CMOS DRAM. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. The K4E641612E-TL60 has CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. The K4E641612E-TL60 is fabricated using Samsungcs advanced CMOS process to realize high band-width, low power consumption and high reliability.
Parametrics
K4E641612E-TL60 absolute maximum ratings: (1)Voltage on any pin relative to VSS VIN,VOUT: -0.5 to +6.5 V; (2)Voltage on VCC supply relative to VSS VCC: -0.5 to +4.6 V; (3)Storage Temperature Tstg: -55 to +150 ℃; (4)Power Dissipation PD: 1 W; (5)Short Circuit Output Current IOS Address: 50 mA.
Features
K4E641612E-TL60 features: (1)Extended Data Out Mode operation; (2)2 CAS Byte/Word Read/Write operation; (3)CAS-before-RAS refresh capability; (4)RAS-only and Hidden refresh capability; (5)Fast parallel test mode capability; (6)Self-refresh capability (L-ver only); (7)LVTTL(3.3V)compatible inputs and outputs; (8)Early Write or output enable controlled write; (9)JEDEC Standard pinout; (10)Available in Plastic TSOP(II)packages; (11)+3.3V±0.3V power supply.
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