(China (Mainland))
Product Summary
The BGY1816N is a three-stage UHF amplifier module in a SOT501A package with a plastic cap. It consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic AlN substrate.
Parametrics
BGY1816N absolute maximum ratings: (1)VS1 DC supply voltage: 4.5 to 5.5 V; (2)VS2 DC supply voltage: 28 V; (3)PD input drive power: 120 mW; (4)PL load power Tmb = 25 ℃: 20 W; (5)Tstg storage temperature: -30 to +100 ℃; (6)Tmb operating mounting base temperature: -10 to +90 ℃.
Features
BGY1816N features: (1)26 V nominal supply voltage; (2)16 W output power into a load of 50 W with an RF drive power of 20 mW.
Diagrams
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 BGY1085A |
NXP Semiconductors |
RF Amplifier CATV P/P AMP 18.5dB |
Data Sheet |
Negotiable |
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BGY1085A,112 |
NXP Semiconductors |
RF Amplifier CATV P/P AMP 18.5dB |
Data Sheet |
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BGY120A |
Other |
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Data Sheet |
Negotiable |
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BGY120B |
Other |
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Data Sheet |
Negotiable |
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BGY122A |
Other |
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Data Sheet |
Negotiable |
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BGY122B |
Other |
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Data Sheet |
Negotiable |
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