(China (Mainland))
Product Summary
The 2SB906-Y is a silicon PNP epitaxial transistor.
Parametrics
2SB906-Y absolut maximum ratings: (1)collector-base voltage: -60V; (2)Collector-emitter voltage: -60V; (3)Emitter-base voltage: -7V; (4)collector current: -3mA; (5)base current: -0.5mA.
Features
2SB906-Y features: (1)Low collector saturation voltage; (2)High power dissipation.
Diagrams
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 2SB906-Y(Q) |
Toshiba |
TRANSISTOR PNP 60V 3A PW-MOLD |
Data Sheet |
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2SB906-Y(TE16L1,NQ) |
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TRANSISTOR PNP 60V 3A PW-MOLD |
Data Sheet |
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