Product Summary

The EDS1216AATA-75-E is a 128M bits SDRAM organized as 2,097,152 words × 16 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the clock. It is packaged in 54-pin plastic TSOP (II).

Parametrics

EDS1216AATA-75-E absolute maximum ratings: (1)Voltage on any pin relative to VSS VT: -0.5 to VDD + 0.5 (≤ 4.6 (max.))V; (2)Supply voltage relative to VSS] VDD: -0.5 to +4.6 V; (3)Short circuit output current IOS: 50 mA; (4)Power dissipation PD: 1.0 W; (5)Operating ambient temperature TA: 0 to +70 ℃; (6)Storage temperature Tstg: -55 to +125 ℃.

Features

EDS1216AATA-75-E features: (1)3.3V power supply; (2)Clock frequency: 133MHz (max.); (3)Single pulsed /RAS; (4)×16 organization; (5)4 banks can operate simultaneously and independently; (6)Burst read/write operation and burst read/single write operation capability; (7)Programmable burst length (BL): 1, 2, 4, 8, full page; (8)2 variations of burst sequence; (9)Programmable /CAS latency (CL): 2, 3; (10)Byte control by UDQM and LDQM; (11)Refresh cycles: 4096 refresh cycles/64ms.

Diagrams

EDS1216AATA-75-E pin connection

EDS1216AABH
EDS1216AABH

Other


Data Sheet

Negotiable 
EDS1216AATA
EDS1216AATA

Other


Data Sheet

Negotiable 
EDS1216AHTA
EDS1216AHTA

Other


Data Sheet

Negotiable 
EDS1216CABH
EDS1216CABH

Other


Data Sheet

Negotiable 
EDS1232AABB
EDS1232AABB

Other


Data Sheet

Negotiable 
EDS1232AASE
EDS1232AASE

Other


Data Sheet

Negotiable